无氧溅射方法制备OLED的ITO透明电极

Fabrication of OLED ITO Transparent Electrode with Oxygen-free Sputtering Method

采用氧化铟锡(ITO)合金材料作为靶材,通过射频磁控溅射制备ITO膜。将获得的ITO膜应用于结构为ITO/m-MTDATA(30nm)/NPB(20nm)/Alq3(50nm)LiF(0.8nm)/Al(100nm)的有机电致发光器件(OLED),得到了最大亮度为11560cd/m2(电压为25V)、最大效率为2.52cd/A(电压为14V)的结果。为了获得双面发光,制作了结构为ITO/m-MTDATA(30nm)/NPB(20nm)/Alq3(50nm)LiF(0.8nm)/Al(20nm)/ITO(50nm)的器件,其阳极出光的最大亮度为14460cd/m2(电压为18V)、最大效率为2.16cd/A(电压为12V),阴极出光的最大亮度为1263cd/m2(电压为19V)、最大效率为0.26cd/A(电压为16V)。

A method to generate double-side light-output organic light emitting devices（OLEDs） using oxygen-free sputtering target by R. F. magnetron reactive sputtering system has been presented. It is demonstrated that the method leads to a promising result in the fabrication of OLED. When the OLED structure is ITO （using oxygen-free sputtering target）/m-MTDATA （30 nm）/NPB（20 nm）/Alqa （50 nm）LiF（0.8 nm）/Al（100 nm） ,the maximum brightness and efficiency achieve 11560 cd/m^2 （V=25 V） ,and 2. 52 cd/A（V= 14 V） ,respectively. In the double-side light-output OLED,whose structure is ITO （commerdal production）/m-MTDATA （30 nm）/NPB（20 nm）/Alq3 （50 um）LiF（0.8 um）/Al（20 nm）/ITO（50 um） （using oxygen-free sputtering target）. The maximum brightness and efficiency measued from anode side attain 14 460 cd/m^2 （V= 18 V） and 2.16 cd/A（V= 12 V）, respectively, and these measured from cathode side are 1263 cd/m^2 （V= 19 V） ,0. 26 cd/A（V= 16 V）.