在AAO衬底上制备纳米Si阵列研究

Preparation of nano-crystalline Si arrays by plasma enhanced CVD using porous alumina templates

用等离子体增强化学气相沉积在多孔氧化铝(AAO)上制备出具有纳米Si阵列分布的薄膜,用透射电子显微镜和扫描电子显微镜观察了不同生长条件下的样品形貌和结构,用X射线衍射谱仪分析了样品的结晶状况．样品呈现出良好的场电子发射稳定性,开启电场为7 V/μm．

Si films with nano-crystalline Si arrays were prepared on anodic aluminium oxide （AAO） templates by plasma enhanced chemical vapor deposition （PECVD）. The structure and morphology of the films were investigated using X-ray diffraction spectroscopy, scanning electron microscopy and transmission electron microscopy. It was found that the size of Si grains could be controlled by the pores diameter of alumina substrate. The quality of the Si films with nano-crystalline Si arrays was affected by the dynamic pressure during the deposition. Electron field emission measurement of the films-was carried out with a rather low turn-on voltage of 7 V/μm.