我国相变存储器的研究现状与发展前景

Current Situation and Developing Trend on Phase-Change Memory in China

介绍了我国相变存储器的研究现状及面临的关键问题。提出了我国相变存储器的发展思路和目标:加强新型材料和器件结构等方面的基础研究,形成创新性的成果,同时加强专利战略布局;加强与国内半导体公司的合作,共同推进相变存储器的产业化进程;探索相变存储器的新应用领域,寻求在通信、金融、交通、医疗、身份证等领域的应用。

The current situation of phase-change memory and its key issues were reviewed. The developing strategy and destination for Chinese phase-change memory was proposed： strengthening the foundation research on new materials and device structure, creating more fruits and patents; enhancing the cooperation with the semiconductor units in China; co-boosting the industral progress of phase-change memory; exploring new application fields, such as communications, finance, traffic, medical treatment, and identification card, may become the major research objects for phase-change memory application in China.