摘要
介绍了ULSI多层铜互连线中的碟形坑问题,对其产生的原因及影响因素进行了分析。针对影响因素中的工艺条件,分别进行了不同压力、温度、流量的试验,得到了上述各因素对抛光速率的影响。基于上述试验结果,确定了铜互连线化学机械抛光(CMP)的工艺条件,并进行了不同抛光液配比的试验,从而找出一种合适的方法,使不同材料的抛光速率达到一致,有效降低了碟形坑出现的几率。
Dishing problem of copper muhilayer interconnection in ULSI was introduced, and the reasons and influencing factors were analyzed. Pointing to the processing condition of influencing factors, we put up several experiments with different pressures, temperatures, flow rates, and ob- tained the influences of the factors on polish rate. Based on the results of experiments the pro- cessing conditions were determined and carried on several experiments with different proportions of slurry, thereby, an appropriate method to obtain uniform polish rates of different materials was found. It can efficiently reduce the occurrence of dishing.
出处
《微纳电子技术》
CAS
2007年第2期101-105,共5页
Micronanoelectronic Technology
基金
天津市自然科学基金重点科技发展计划项目资助(043801211)
