高聚物电子显微学的离子蚀刻技术

Ion Etching Technique of Polymers for Electron Microscopy

电子显微镜的发展对研究高聚物材料的形态结构提供了一种有力而方便的手段。为了提高图象观察的质量和真实反映材料结构的细节必须使材料的结构细节充分暴露出来。暴露材料结构的方法很多,其中以氩离子蚀刻法最简易可行。本文介绍了氩离子蚀刻技术处理刚性链和柔性链两类性质不同高聚物材料的试样,並用透射和扫描电子显微镜观察其形态结构。结果表明,在选择合适的蚀刻条件下,氩离子蚀刻法是高聚物材料电镜研究中的一种较为理想的制样技术。

The development of the electron microscope provides an useful tool for characterization of the morphological structure of polymeric materials. In order to reveal the detail structure of the polymeric materials, the selective etching treatment of the materials is necessary. In this paper, an argon ion etching technique combined with TEM and SEM has been used for in-ternal structure study in doth samples of flexible and rigid chaid polymers. The results obtained show that the argon ion etching is a more sample technique tO prepare the sample of polymers for observing morphological structure of electron microscopy. if the suitable etching conditions are controlled.