Lateral Epitaxy Overgrown(LEO)GaN导热系数的数值研究

NUMERICAL INVESTIGATION OF THERMAL CONDUCTIVITY IN LATERAL EPITAXY OVERGROWN GaN

利用修正的Callaway模型对含杂质、位错、以及同位素的LEO GaN的导热系数进行了研究,计算表明同位素对LEO GaN的导热系数影响较大,而位错和杂质大于一定值时其值才对导热系数产生影响．

Using modified Callaway model we have calculated the thermal conductivity of LEO GaN with isotope, point defects and dislocations. The results showed that isotope has great influence on thermal conductivity of LEO GaN. As for thermal conductivity impact of dislocation and impurity, it becomes notable when the density of dislocation and impurity exceeds a critical value.