摘要
本文给出了具有场环和场板的穿通型ＶＤＭＯＳ结构的击穿电压的解析表达式．并通过与在ｎ／ｎ￣＋外延衬底上制造的带有场环的二级管结构的ＶＤＭＯＳ器件的实验结果，进行比较，二者吻合的很好．
The breakdown voltage of a closed-form analytical expressinns for the punched through VDMOS structures, including the effect of floating-guardrings and field plates is proPOsed. Compared the theoretical with the result, of measured data on VDMOS devices by floating-guardring diode structues, fabricated on n/n+ epilaxial, is very good, in consisleney.
出处
《辽宁大学学报（自然科学版）》
CAS
1996年第3期20-25,共6页
Journal of Liaoning University：Natural Sciences Edition
