热壁外延（HWE）制备PbTe／PbSnTe异质结和超晶格

HWE Grown PbTe/PbSnTe HJ and SL

本文于国内首次报导，利用简化的热壁外延（ＨＷＥ）装置在ＢａＦ＿２（１１１）衬底上生长了Ⅳ—Ⅵ族半导体单晶外延层，制备了ＰｂＴｅ／ＰｂＳｎＴｅ异质结和具有２０个周期的超晶格．测试结果表明，所制备的外延层的晶体结构完美，异质结具有良好的整流特性．通过Ｘ—光衍射求出了超晶格的周期．超晶格样品（２２２）衍射峰的卫星峰不对称，说明样品内有应变．

In this paper, we report, for the first time at home, that the growth of Ⅳ -Ⅵ semiconductor single crystalline epilayer was Obtained and the preparation of PbTe/PbSnTe heterojunction and superlattice with 20 periods was prepared on BaF2(111 ) substrate by using simplified hot wall epitaxy(HWE) apparatus. The measurements show that the epilayer has perfect crystal structure and the heterojunction has gOOd Ⅰ-Ⅴ characteristic. The value of superlattice period was got by X -ray diffraction. The unsymmetrical satellite peak of(222) diffraction peak shows the presence of strain in this sample.