摘要
A novel scheme of all-optical AND gate based on a Fabry-Perot semiconductor optical amplifier(FP-SOA) is proposed and its feasibility is verified by simulation. Using this scheme, all-optical AND gate can be realized with the extinction ratio of 10 dB. The influence of pulse interval and pulse width on the extinction ratio is also investigated.
A novel scheme of all-optical AND gate based on a Fabry-Perot semiconductor optical amplifier (FP-SOA) is proposed and its feasibility is verified by simulation. Using this scheme, all-optical AND gate can be realized with the extinction ratio of 10 dB. The influence of pulse interval and pulse width on the extinction ratio is also investigated.
基金
National Nature Science Foundation of China(60572008)