a-SiC:H/pin势阱结构可见光电注入发光

a-SiC:H/PIN POTENTIAL WELL STRUCTURE VISIBLE- LIGHT INJECTION-ELECTROLUMINESCENCE

本文提出一种新的a-SiC:H/pin势阱结构可见光注入式电致发光器件。设计制作了一组势阱结构和势垒结构对比的a-SiC:H/pin发光器件,其测试结果表明这种新的势阱结构器件发光特性较势垒结构器件有明显改进。本文还研究了该类器件在脉冲电流激励下的瞬态发光特性。

A new a-SiC:H/pin potential well structure visible-light injection-electroluminescent device has been designed. The band gaps of p and n a-SiC:H layer are larger than that of i layer, so the injection carrier can be confined in luminescent active i layer.Two types of samples,potential well structure and potential barrier structure devices, were prepared under same conditions. Results of the measurement of electroluminescence intensity versus injection current show that potential well structure is better than potential barrier structure. Transient electroluminescence was also measured. The electroluminescence has a delay time that decreases as the pulsed excitation current increases. Luminescence lifetime is about 0.3μs. It doesn't vary with the excitation current.