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氮化物异质结电子气的二维特性和迁移率 被引量：14

Two Dimensional Degree of Electron Gases and Mobility in Nitride Heterojunction
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摘要 从自洽求解薛定谔方程出发,计算了氮化物异质结中的二维电子气、退局域态和二维表面态。研究了电子气二维特性与迁移率间的关联。用电子气的二维特性和沟道电子向表面态溢出模型解释了室温和低温下迁移率随电子浓度变化的行为。以电子迁移率与异质结构间的关联为依据,提出了优化设计异质结构来增大电子迁移率和降低迁移率随电子浓度变化的新思路。 Following the self-consistent solution of Schrbdinger equation the two- dimensional electron gases, delocalized states, and two--dimensional surface states are calculated in this paper. The correlation between two dimensional degrees of electron gases and their mobility is investigated. The variation of electron mobility with electron concentration at room and cryogenic temperature is explained by the two dimensional degree of electron gases and the overflow of electrons in channel to surface states. Based on the correlation between two dimensional degree of electron gases and their mobility a new train of thought for optimizing heterostruetures to enhance the electron mobility and reduce the variation of mobility with electron concentration is proposed.
作者 薛舫时
机构地区 南京电子器件研究所
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2007年第1期1-6,12,共7页 Research & Progress of SSE
关键词 :铝镓氮/氮化镓异质结 电子气的二维特性 退局域态 二维表面态 迁移率 子带间散射 AIGaN/GaN heterojunction two dimensional degree of electron gases delocalized states two dimensional surface states mobility interband scattering
分类号 TN386 [电子电信—物理电子学]
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参考文献20

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二级参考文献22

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共引文献7

同被引文献154

引证文献14

二级引证文献8

固体电子学研究与进展
2007年 第1期

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