摘要
利用微磁学方法系统研究了纳米尺度的NiFe薄膜菱形单元的自发磁化状态及剩磁状态。研究结果表明,在不同的尺寸下,菱形单元将有不同的自发磁化状态及剩磁状态。在单元的长宽尺寸小于某个临界尺寸时,菱形单元结构呈现单畴态。同时还分析了菱形NiFe单元作为磁性随机存储器(MRAM)存储单元时的要求。
The spontaneous and remnant magnetization states of the nano-size diamond-shaped NiFe film elements have been investigated by the micromagnetic simulation. The results show that various spontaneous and remnant magnetization states appear under different element dimension. When the length and width of the element are smaller than a critical value, a single domain spontaneous and remnant magnetization state was obtained. The size requirments of the diamond-shaped element as a memory unit in the magnetic random access memory (MRAM) are also analyzed in this paper.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2007年第1期24-27,31,共5页
Research & Progress of SSE
基金
国家重大基础研究与发展项目(No.51310)
关键词
NiFe薄膜
菱形
微磁学模拟
磁性随机存储器
NiFe film
diamond
micromagnetic simulation
magnetic random access memory