肖特基栅型共振隧穿晶体管的制作研究

Study of the Fabrication of Schottky-gated Resonant Tunneling Transistor

已研制成了肖特基栅共振隧穿晶体管,在双势垒结构上蒸发铂金形成栅。通过调制准二维电子积累层的面积进而达到控制隧穿电流的目的。并对发射极正反接电压不同而出现的不同调制现象进行了分析。

A Schottky gate resonant tunneling transistor （RTT） is fabricated. The gate is formed by electroplating Pt/Au onto the side of an double barrier structure. The gate voltage modulates the tunneling current by modulating the area of the quasi-two-dimensional electron accumulation layer. The different modulation results with different voltage on emitter were analized.