0．2μmGaAs PHEMT3．1～10．6GHz宽带低噪声放大器设计

Design of 3.1～10.6 GHz Wideband Low Noise Amplifier with 0.2 μm GaAs PHEMT

采用OMMIC公司提供的0．2μmGaAsPHEMT工艺（FT=60GHz）设计并实现了一种适用于宽带无线通信系统接收前端的低噪声放大器。在3．1～10．6GHz的频带内测试结果如下：最高增益为13dB；增益波动〈2dB；输入回波损耗S11〈-11dB；输出回波损耗S22〈-16dB；噪声系数NF〈3．9dB。5V电源供电，功耗为120mw。芯片面积为0．5mm×0．9mm。与近期公开发表的宽带低噪声放大器测试结果相比较，本电路结构具有芯片面积小、工作带宽大、噪声系数低的优点。

A low noise amplifier （LNA） for ultra-wideband （UWB） front-ends is designed and fabricated using OMMIC＇ s 0. 2 μm GaAs PHEMT （pseudomorphic high electron mobility transistors） technology. The performances of the LNA have been measured in the frequency range of 3.1-10. 6 GHz. The peak gain is 14 dB; The input and output return losses are -11 dB and -16 dB,respectively. The noise figure （NF） is less than 3.9 dB. It consumes a DC power of 120 mW under a 5 V supply. The chip area is 0. 6 mm×1.5 mm. A comparison with recently published UWB LNAs shows this LNA has smaller chip area, broader bandwidth and lower NF.