HPM作用下27系列EPROM存储器失效的实验研究

The Experimental Study of the Series of 27-EPROM Memory Failure under the Radiation of High Power Microwave(HPM)

在高功率微波（ＨＰＭ）辐射下，２７系列ＥＰＲＯＭ存储器呈现出暂时失效及永久失效两种情况。进一步的研究表明，在较低功率密度电磁波辐射下，器件失效的主要原因是场的作用；在较高功率密度电磁波辐射下，器件失效的原因除了场的作用外，还有热致作用。场的作用主要是通过形成空间电偶层产生微波霍耳效应所致。

Under the radiation of high POwer microwave(HPM)the series of 27--EPROM present temporaryand Permanent failure. The further investigation indicates that the failure of devices is mainly caused by the field effect under the low power density radiation of microwave and caused by not only the field effect but also the heatingeffect under the high power density radiation of microwave.The field effect is produced through the microwave Halleffect in semiconductor.