微波GaAs/AlGaAs高电子迁移率晶体管

GaAs/AIGaAs Microwave High Electron Mobility Transistor

采用国产分子束外延设备及国内外尚未报导的部分工艺,试制出具有微波特性的高电子迁移率品体管,其跨导80～135mS/mm,在4GHz下,最小噪声系数2.49dB,最大功率增益10.2dB。

Utilizing the home-made molecular beam epitaxy system (MBE), and employing some novel techniques, GaAs/AlGaAs high electron mobility transistors have been made successfully. The trans-conductance is at the range of 80-135mS/mm. The minimum noise figure 2.49dB and the maximum power gain 10.2 dB at 4GHz are obtained.