SnO_2掺杂对TiO_2/Si纳米复合材料性能的影响

The influence of SnO_2 adulteration on the character of TiO_2/Si composite nanomaterial

采用溶胶-凝胶法在p-型单晶硅的表面镀上一层TiO2-SnO2纳米复合薄膜,并在一定的温度下煅烧得到TiO2-SnO2/Si复合材料.实验研究发现,在TiO2中掺杂一定量的SnO2会使TiO2/Si复合材料的光电压增强,且SnO2的掺杂会抑制TiO2的晶相转变,使复合材料的高温稳定性增强.另外,SnO2的掺杂量和煅烧温度对复合材料的光电压都有影响.当SnO2掺杂量约为20%,煅烧温度为600℃时复合材料的光电压最强.

TiO2-SnO2/Si composite nanomaterial was prepared by depositing a TiO2-SnO2 thin film on the p-Si substrate with sol-gel method and then calcining at certain temperature. The results showed that the addition of SnO2 to TiO2 can inhibit the transformation of crystal phase of TiO2, improve the stability of TiO2/Si at high temperature and enhance the photovoltage of TiO2/Si. Furthermore, the content of SnO2 and calcination temperature can influence the photovoltage of TiO2/Si. The photovaltage of TiO2-SnO2/Si which contented SnO2 20 % was maximum at annealing temperature of 600 ℃.