摘要
通过分析微机械Golay腔型红外探测器设计中影响性能的关键因素:温致压变系数、红外吸收层、阻尼噪声,提出了一种采用硅和玻璃阳极键合技术实现的新型Golay腔型红外探测器。计算其灵敏度为2 700 pF/W、噪声等效功率为8.4×10-8W/Hz1/2和响应时间为0.5m s。利用光学测量变形,可以实现探测器无电化设计,使得测量不受强电磁场和湿度的影响。
The key factors are analyzed in designing a micromachined infrared detector based on the principle of the Golay cell,including thermal-pressure coefficient,infrared absorption layer and damping noise. A new prototype with Si-glass anodic bonding technology is presented. The device sensitivity is 2 700 pF/W, noise equivalent power is 8.4×10^-8 W/Hz^1/2 and response time is 0.5 ms. With optical displacement meter,non-electricity detection can be realized, which helps to avoid the effect of strong electromagnetic field and humidity.
出处
《传感器与微系统》
CSCD
北大核心
2007年第3期20-23,共4页
Transducer and Microsystem Technologies
