电子束蒸发制备二氧化钛薄膜应力测量

Stress Distributions of Titanium Oxide Film Grown by Electron-Beam Evaporation

在圆形硅基底上采用电子束加热蒸发制备了二氧化钛薄膜。薄膜应力测试结果表明,二氧化钛薄膜的内应力分布是不均匀的;二氧化钛薄膜的内应力集中主要出现在薄膜的边缘区域,有正应力的集中也有负应力的集中。原子力显微镜(AFM)结果显示,不同的沉积速率和沉积温度下制备的二氧化钛薄膜具有不同的晶体结构和应力分布;沉积速率和沉积温度对二氧化钛薄膜内应力的影响是明显的,可以通过选择合适的沉积参数使内应力降低或达到最小。

Stress distributions of the TiO2 films, grown on smaU silicon disk by electron beam evaporation, were experimentally studied. The results show that non-uniform stress distributions of the film exist with its maximum or minimum internal stress concentrating on the edges of the film. Characterization of its microstructures with an atomic force microscope（AFM） shows that the deposition rate and the substrate temperature significantly affect the stress distribution. We suggest that the stress distributions of the TiO2 film can be minimized by optimizing the film growth conditions.