摘要
研究总结了功率MOSFET器件与BJT器件相比的发展优势。介绍了作为VDMOSFET进一步发展的新型器件Trench MOSFET研究提出的背景及意义,并从其基本结构出发阐述了Trench MOSFET与VDMOS相比的电学性能特点。最后对其发展现状,关键技术和结构参数及其发展趋势进行了概括、总结和展望。
The advantages of power MOSFET devices over BJT were described. The background and meaning on the study of Trench MOSFET： a fresher development of VDMOS, were introduced, Based on device structures, the characteristics compared with VDMOSFET were studied. The current status and trend on the development of Trench MOSFET with the study of the key processes and structural parameters were also summarized.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第4期277-280,292,共5页
Semiconductor Technology
