摘要
半导体GaAs单晶材料通常用于制作激光二极管和高亮度发光二极管。对于激光二极管而言,特别需要低位错材料。简要阐述了垂直布里奇曼(VB)法生长GaAs单晶材料的动力学原理及VB-GaAs单晶的生长技术。本技术可实现低位错GaAs单晶材料的生长,拉制的50 mm掺硅GaAs单晶的平均位错密度为500 cm-2,最大为1000 cm-2。
Semiconductive GaAs single crystals are used for laser diodes （LDs） and light emitting diodes （LEDs）. LDs, in particular, need low-dislocation-density single crystals. Crystal growth dynamics theory and technique of vertical bridgman method for GaAs single crystal growing were introduced. By the technique, low-dislocation-density GaAs single crystals can be produced. 50 mm Si-doped single crystal was developed with an average EPD less than 500 cm^-2, and the maximum EPD is less than 1000 cm^-2.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第4期293-296,共4页
Semiconductor Technology
基金
国家部委基金项目
