镍诱导纳米晶硅薄膜的生长

Research on nickel induced silicon nanocrystal growth

采用磁控溅射方法制备了含镍过渡层的富纳米晶硅二氧化硅薄膜.对薄膜退火后的微观结构和发光性能进行了试验分析.结果表明,在高温退火后,有Ni过渡层的富纳米晶硅薄膜较没有Ni过渡层的薄膜具有更高的纳米晶硅密度和更强的室温光致发光强度.对试验结果进行热力学分析后,认为NiSi2作为纳米晶硅的形核中心诱导了薄膜的分相和纳米晶硅生长.

Silicon nanocrystal rich Si02 thin film with nickel interlayer is deposited by magnetron sputtering. The microstructure and photoluminescence of this film is experimentally analyzed after high temperature annealing. The film shows higher silicon nanocrystal density and stronger room temperature photoluminescence intensity comparing to the film without nickel. After quantitatively analyzed the experimental results with classical nucleation theory, it is concluded that the mechanism of NiSi： induced nucleation is the origin of this phenomenon.