GaN基p-i-n结构紫外光探测器

Ultraviolet Photodetectors Based on GaN with p-i-n structure

用反应分子束外延(RMBE)方法在蓝宝石衬底上制备了GaN p-i-n结构,应用常规的半导体工艺制成了紫外光探测器,测试结果显示其正向导通电压为4.6 V,反向击穿电压大于40V;室温下反偏3 V时的暗电流为6.68 pA,峰值响应度0.115 A/W出现在367 nm处;400 nm处的响应度为6.59×10-5A/W,比峰值响应度低四个量级。

A ultraviolet photodetectors with p-i-n structure based on GaN by RMBE method growing on sapphire are introduced,and the measurement of their electronic characteristics is presented.The result is：Vth≈ 4.6 V,Vbr≥ 40 V,the dark current is 6.68 pA,and the peak responsivity is 0.115 A/W at 367 nm while the reverse voltage is 3 V.The peak responsivity is6.59×10^-5A/W at 400 nm,which is four orders of magnitude lower than peak responsivity.