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以TPBi为发光主体的蓝光OLED器件研究 被引量:3

Study on Blue OLED with TPBi as Emitting Host Material
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摘要 采用真空热蒸镀技术,以TPBi为蓝光主体材料制备了一类多层结构的蓝色有机发光二极管(OLED),其结构为:ITO/CuPc(30 nm)/NPB(40 nm)/TPBi(30 nm)∶GDI691(x%)/Alq3(20 nm)/LiF(1 nm)/Al(50 nm),其中x%为发光层掺杂浓度,实验中分别取1%,2%,3%和4%。从测试结果分析可知:蓝色OLED器件的电流-电压特性曲线,亮度-电压曲线,亮度-电流曲线及效率等光电性能随着掺杂浓度的变化而改变。当掺杂浓度为3%,驱动电压为15V时,可获得稳定的蓝光器件,其最大亮度为6827 cd.m-2,色坐标CIE为x=0.147,y=0.215,最大流明效率为6.77lm.W-1,电致发光光谱的峰值为468 nm。 A kind of multi-layer structure blue organic light-emitting diode(OLED) has been developed with TPBi as emitting host material by using vacuum deposition.Two kinds of materials are used as the emitting layer at the same time and the same chamber.The typical structure of OLED is ITO/CuPc(30 nm)/NPB(40 nm)/TPBi(30 nm)∶GDI691(x%)/Alq3(20 nm)/LiF(1 nm)/Al(50 nm),x% is the doping consistence in emitting layer of OLED and its value changes from 1% to 4%.Optoelectronic performances including brightness,efficiency,spectrum,etc.,change with the doping consistence. When x% is 3%, the brightness of the device reaches to 6 827 cd m^-2 at the drive voltage of 15 V,CIE coordinates are x=0.147,y=0.215, maximum luminous efficiency is 6. 77 lm·W^-1,and the blue emission spectrum peak is 468 nm.
出处 《半导体光电》 EI CAS CSCD 北大核心 2007年第1期40-42,63,共4页 Semiconductor Optoelectronics
基金 广东省"十五"重大基金资助项目(H04010501W050311) 电子科技大学青年基金资助项目(YF0205021)
关键词 有机电致发光 多层结构 真空热蒸镀 掺杂 organic light-emitting diode multi-layer structure vacuum deposition doping
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参考文献13

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共引文献95

同被引文献26

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