低温沉积硅薄膜微结构的Raman分析

Raman Analysis of Microstructure of Silicon Thin Films Deposited at Low Temperatures

用Raman散射谱研究了以SiH4/H2为气源,用等离子体增强化学气相沉积技术,低温制备的一系列硅薄膜的微结构特征。结果表明:在常规气压和常规功率下,衬底温度在200～500℃之间,存在结晶最佳点,400℃结晶效果相对最好;在高压高功率下沉积和常压常功率下沉积相比,高压高功率更有利于薄膜晶化;低温短时的高气压高功率沉积,玻璃衬底与铝覆盖的玻璃衬底相比,玻璃上的硅薄膜晶粒尺寸更大,而铝覆盖的玻璃衬底上的硅薄膜的晶化率更高。

The microstructure of silicon thin films fabricated at low temperature by plasma enhanced chemical vapor deposition（PECVD） using H2/SiH4 has been studied by Raman scattering.The results show that substrate temperature plays an important role in depositing process.And there is a best temperature point of 400 ℃ for crystallization between 200 ℃ to 500 ℃.The silicon thin films are easy to crystallize under high-pressure and high-power deposition process compared with conventional conditions.The grain size of silicon thin films on glass is larger than that on aluminum covered glass while the crystallinity of that on glass was lower than that on aluminum covered glass.