横向型GaAs光电导开关超宽带辐射特性研究

Radiation Properties of Ultra-Wideband Microwave Generation Based on GaAs Photoconductive Semiconductor Switches

在实验研究的基础上,根据半导体光电子学理论,对横向型GaAs超快光电导开关的线性和非线性辐射特性作了研究.结果表明:在不同激励光能与偏置电压情况下,光导开关可处于线性与非线性两种导通工作模式;光电导开关的非线性工作模式主要是因为开关中的载流子以电荷畴的形式输运.

By utilizing the theory of semiconductor optoelectronics, both linear and nonlinear mode for horizontal GaAs ultrafast photoconductive semiconductor switches are studied based on experiments. It is found that Photoconductive Semiconductor Switches will present two distinct work patterns of the linear mode and nonlinear mode under the different biased field and luser pulse; the nonlinear mode is displayed because that charge domain formed by carriers is transmitted within switches.