陶瓷厚膜无机电致发光显示器中ZnS∶Mn发光层的优化制备

Optimal Fabrication of ZnS∶Mn Phosphor Layer in Inorganic Thick Dielectric Electroluminescent Displays

为了提高陶瓷厚膜无机电致发光显示器的亮度,采用陶瓷基片/内电极/陶瓷厚膜/发光层/上绝缘层/透明电极的器件结构系统研究了ZnS∶Mn发光层的制备工艺.结果表明当优化的发光层厚度为600 nm,沉积温度为280℃时制备ZnS∶Mn发光层可以获得器件的最大亮度.在高温500℃退火时,器件的亮度-驱动电压曲线最优.发光层结晶性的改善和Mn+的均匀扩散,使得优化的沉积温度和退火温度制备的ZnS∶Mn发光层具有良好的光电特性.

Based on the structure of ceramic substrate/internal electrodes/thick dielectric film/light-emitting layer/thin dielectric film/ITO, the fabrication process of ZnS： Mn phosphor layer has been investigated to improve the brightness of inorganic thick dielectric electroluminescent （TDEL） devices. The optimal thickness and fabrication temperature of ZnS ： Mn film are 600 nm and 280 ℃, respectively, and produced the highest brightness of TDEL devices. The photoelectric properties of TDEL devices were improved by an annealing process of ZnS： Mn layer, and the optimal brightness-voltage curve （that is, the biggest brightness and the steepest curve） of TDEL devices was obtained by an annealing temperature of 500 ℃. The improvement of photoelectric properties of TDEL devices by the optimal fabrication temperature and annealing temperature of ZnS： Mn layer was attributed to the crystalline improvement of ZnS： Mn layer and the uniform diffusion of Mn^＋.