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Electrical bistable characteristics of poly (phenylene sulfide) thin film deposited by thermal evaporation 被引量:1

Electrical bistable characteristics of poly(phenylene sulfide) thin film deposited by thermal evaporation
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摘要 Poly(phenylene sulfide) (PPS) is a well-known organic insulator. However, the PPS thin film, deposited by thermal evaporation in vacuum, showed electrical bistable characteristics. The structure of the PPS thin-film device was glass/ITO/PPS (300 nm)/Au. The thin film can be converted to a high conductance state by applying a pulse of 80 V (5 s), and brought back to a low conductance state by applying a pulse of 100 V (5 s). This kind of thin film is potential for active layer of a memory device. The critical voltage of the device is about 40 V, while the read-out voltage is 5 V. We tentatively ascribe the bistable phe-nomenon to the charge transfer from S to C atoms in the PPS molecule chains. Poly(phenylene sulfide) (PPS) is a well-known organic insulator. However, the PPS thin film, deposited by thermal evaporation in vacuum, showed electrical bistable characteristics. The structure of the PPS thin-film device was glass/ITOIPPS (300 nm)/Au. The thin film can be converted to a high conductance state by applying a pulse of 80 V (5 s), and brought back to a low conductance state by applying a pulse of 100 V (5 s). This kind of thin film is potential for active layer of a memory device. The critical voltage of the device is about 40 V, while the read-out voltage is 5 V. We tentatively ascribe the bistable phenomenon to the charge transfer from S to C atoms in the PPS molecule chains.
出处 《Chinese Science Bulletin》 SCIE EI CAS 2007年第6期732-735,共4页
基金 Supported by the National Natural Science Foundation of China (Grant Nos. 50573039 and 50473009) the National Key Basic Research and Development Pro-gram (Grand No. 2002CB211800) the National Key Program for Basic Re-search of China (Grant No. 2001CCA05000)
关键词 热蒸发沉积 聚苯硫醚薄膜 电子双稳态性质 存储器件 poly(phenylene sulfide), thermal evaporation, electrical bistability, memory devices
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  • 1Friend R H,Giles J R M.An optical study of the arsenic pentafluoride doping of poly(p-phenylene sulphide) polaron and bipolaron transitions[].Journal of the Chemical Society Chemical Communications.1984
  • 2Chu C W,Ouyang J Y,Tseng J H,et al.Organic donor-acceptor sys-tem exhibiting electrical bistability for use in memory devices[].Advanced Materials.2005
  • 3Ouyang J Y,Chu C W,Sieves D,et al.Electric-field-induced charge transfer between gold nanoparticle and capping 2-naphthalenethiol and organic memory cells[].Applied Physics Letters.2005
  • 4Ma L P,Xu Q F,Yang Y.Organic nonvolatile memory by controlling the dynamic copper-ion concentration within organic layer[].Applied Physics Letters.2004
  • 5Oyamada T,Tanaka H,Matsushige K,et al.Switching effect in Cu:TCNQ charge transfer-complex thin films by vacuum codeposi-tion[].Applied Physics Letters.2005
  • 6Potember R S,Poehler T O,Cowan D O.Electrical switching and memory phenomena in Cu-TCNQ thin films[].Applied Physics Letters.1979
  • 7Tabor B J,Magre E P,Boon J.The crystal structure of poly-p- phenylene sulphide[].European Polymer Journal.1971

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