基于压痕功法对单晶硅压痕硬度的测量

MEASUREMENT OF INDENTATION HARDNESS OF SINGLE CRYSTAL SILICON BY THE WORK-OF-INDENTATION METHOD

在对材料的微/纳米级表层压痕硬度测试中,压痕周围出现的凸起对硬度的计算结果有很大的影响。采用压痕功法,通过载荷-压深曲线直接得到压痕过程中所作的功,利用原子力显微镜和Matlab软件,精确得到压痕中产生的塑性变形体积,并计算得到材料的硬度值。用压痕功法对单晶硅的压痕硬度进行了实验研究,并与其它方法进行了比较分析。结果表明:压痕功法得到的结果更稳定,凸起对结果影响较小。

In material micro/nano hardness testing, it was found that the hardness value is observably affected by material pile-up at the edges of indents. The hardness can be recalculated and revised by work-of-indentation methods. The work-of-indentation process can be directly obtained by the load-depth curve, and the plastic volume of the indentation can be obtained by atomic force microscopy and Matiab software. A single crystal silicon was used for indentation hardness experiments and its hardness was obtained by the work-of-indentation method. The result indicates that compared with other methods, the work-of-indentation method produces more stable hardness that is less sensitive to the effect of pile-up.