工艺因素对α-Al_2O_3微粒表面SnO_2涂层zeta电位的影响

INFLUENCE OF PROCESSING ON ZETA POTENTIAL OF SnO_2 COATING ON SURFACE OF α-Al_2O_3 MICROPARTICLE

以四氯化锡、三氯化铟和氨水为原料,采用原位生成法在α-Al2O3微粒表面制备了In掺杂的纳米SnO2涂层,研究了In掺杂量和焙烧温度对SnO2涂层zeta电位的影响规律和影响机理。利用X射线衍射仪、透射电镜对样品的物相组成和显微结构进行分析。结果表明:当In掺杂摩尔分数为2%、焙烧温度为1000℃时,涂层具有最低的zeta电位。此外,用此涂层修饰后的α-Al2O3微滤膜的水过滤通量有显著地提高。

Using tin tetrachloride, indium trichloride and aqua ammonia as raw materials, In doped SnO2 nano-coating on the surface of α-Al2O3 micro-powder was prepared using an in-sire process. The influence of the In-doping amount and baking temperature on the zeta potential of the coating was studied. The phase composition and microstructure of samples were investigated with X-ray dif- fraction and transmission electron microscope. The mechanism of the effect of processing was also investigated. The results show that the zeta potential of the SnO2 coating was the lowest when the molar fraction of In-doped was 2% and the baking temperature was 1000 ℃. By modifying the coating, the flux of the α-Al2O3 microfiltration membrane can be greatly improved.