用低压反应离子镀的方法制备Ge_(1-x)C_x单层非均匀增透膜的研究

Study of single layer inhomogeneous Ge_(1-x)C_x antireflection coating prepared by reactive low voltage ion plating technique

用低压反应离子镀（RLVIP）的方法在Ge基底上制备了Ge1-xCx单层非均匀增透薄膜。随着沉积速率在0．05-0．4nm／s之间的变化，其折射率在2．31～3．42之间可变。实验结果表明，镀制的Ge1-xCx单层非均匀增透保护薄膜均为无定形结构，并实现了从2000-8000nm的宽波段增透。当沉积速率为0．1nm／s时，单面平均透过率从68．6％提高到了80．9％，比单面未镀膜时提高了17．9％。通过对薄膜的稳定性和牢固度进行测试表明，制备的Ge1-xCx单层非均匀增透薄膜具有良好的性能。

Single layer inhomogeneous Ge1 - xCx antireflection coating is fabricated by RLVIP（Reactive low voltage ion plating） technique on Ge substrate. With deposition rate varying between 0. 05-0. 4nm/s, the refractive index of prepared coating is in the range of 2.31-3.42. Experimental results indicate that all fabricated single layer inhomogeneous antireflection coatings are amorphous structure, and achieves antireflection of wide optical wavelength range between 2000-8000nm. At deposition rate of 0. 1nm/s, average transmittance of single side improves from 68.6% to 80.9%, comparing to uncoated single side, it increases 17.9%. Measurements of stability and firmness indicate that the prepared single layer inhomogeneous Ge1- xCx antireflection coating has good performance.