摘要
用低压反应离子镀(RLVIP)的方法在Ge基底上制备了Ge1-xCx单层非均匀增透薄膜。随着沉积速率在0.05-0.4nm/s之间的变化,其折射率在2.31~3.42之间可变。实验结果表明,镀制的Ge1-xCx单层非均匀增透保护薄膜均为无定形结构,并实现了从2000-8000nm的宽波段增透。当沉积速率为0.1nm/s时,单面平均透过率从68.6%提高到了80.9%,比单面未镀膜时提高了17.9%。通过对薄膜的稳定性和牢固度进行测试表明,制备的Ge1-xCx单层非均匀增透薄膜具有良好的性能。
Single layer inhomogeneous Ge1 - xCx antireflection coating is fabricated by RLVIP(Reactive low voltage ion plating) technique on Ge substrate. With deposition rate varying between 0. 05-0. 4nm/s, the refractive index of prepared coating is in the range of 2.31-3.42. Experimental results indicate that all fabricated single layer inhomogeneous antireflection coatings are amorphous structure, and achieves antireflection of wide optical wavelength range between 2000-8000nm. At deposition rate of 0. 1nm/s, average transmittance of single side improves from 68.6% to 80.9%, comparing to uncoated single side, it increases 17.9%. Measurements of stability and firmness indicate that the prepared single layer inhomogeneous Ge1- xCx antireflection coating has good performance.
出处
《光学技术》
EI
CAS
CSCD
北大核心
2007年第2期302-304,共3页
Optical Technique
基金
国家自然科学基金资助项目(60478035)