界面对PZT铁电薄膜性能的影响

Effect of Interface on Properties of PZT Ferroelectric Thin Films

利用射频溅射工艺,在低阻硅p-Si(111)基片上分别制备Pb(Zr0.52Ti0.48)O3(PZT)和PZT/LaN iO3(LNO)薄膜,样品在大气中进行650℃/15 min后热退火处理.用X射线衍射仪(XRD)、原子力显微镜(AFM)等手段分析不同衬底与PZT薄膜之间的界面对薄膜微观结构和铁电性能的影响,实验结果分析表明,即使溅射工艺相同,在p-Si和LNO/p-Si上外延生长的PZT薄膜结晶取向、晶颗大小和表面平整度存在很大差异,薄膜与底电极间的界面明显地影响PZT薄膜的微观结构和铁电性能.

Pb（ Zr0.52Ti0.48）O3 （FZT） and PZT/LaNiO3 （LNO）thin films were deposited on p- Si [ P type Si （111 ） for short p -Si ] substrate using RF magnetron sputtering, followed by thermal annealing process with temperature 650℃ in air ambient for 15 minutes. The microstructure of PZT thin films was investigated by X - ray diffraction （XRD） measurements and atom force microscopy （AFM）. It is found that the interface between FZT and Si substrate obviously affects the microstructure and ferroelectricity of PZT thin films.