绝缘体上硅锗薄膜的退火研究

Annealing research of SiGe thin films on insulator

绝缘体上硅锗是近年来受到人们广泛关注和研究的新型微电子材料,它以其独特的全介质隔离结构,可为研发新型的超高速、低功耗、抗辐射、高集成度硅基器件和芯片提供一种新的解决方案,有希望成为突破体硅器件的物理极限、在深亚微米超大规模集成电路芯片主流技术中获得广泛地应用。介绍了我们制备绝缘体上硅锗薄膜的方法和结果。

In recent years, SiGe thin films on insulator as a new kind of microelectronic materials has attracted widely attention and become the focus of research activities but it is too costly to carry on large-scale production. In this article molecular beam epitaxy method is investigated to fabricate SiGe thin films for the objective of reducing cost. As a result SiGe thin films have a good crystalline with the Ge fraction varying between 0.3 and 0.6. In conclusion, high quality SiGe thin films was prepared with simpler process and lower cost by using molecular beam epitaxy method, which is advantageous to carrying out large-scale production.