硅低温晶体管的研究

Investigation of Silicon Low Temperature Bipolar Transistors

本文从理论和实验上研究了硅晶体管电流增益的低温特性,建立了电流增益的温度模型阐明了低温时电流增益下降的机理,探讨了采用轻掺杂技术和a-Si发射区获得良好电性能的硅低温晶体管的方法,理论分析和实验结果吻合一致。

The low temperature characteristics of current gain of silicon bipolar transistors are studied both theoretically and experimentally in this paper. A temperature model of current gain is proposed and the mechanism of the fall of current gain at low temperature is explained. To obtain low temperature silicon bipolar transintors of good electrical performance the methods of using the light doping emitter and a-Si emitter is discussed. The results of theoretical analysis are in good agreement with the experimental ones.