摘要
用球磨法制备Bi4Ti3O1(2BTO)靶材。用PLD法在Pt/TiO2/SiO2/Si基片上先分别以三种氧化物SrRuO(3SRO)、LaSrCoO3(LSCO)、LaNiO3(LNO)和Pt生成复合底电极,再在其上生长了外延取向的BTO薄膜。分析了薄膜的结构和性能。结果表明,这种BTO薄膜的c轴取向得到抑制,其极化强度从0.45×10–6C/cm2提高到0.9×10–6C/cm2;矫顽场强从90×103V/cm下降到50×103V/cm。
Bi4Ti3OI2（BTO） was prepared by ballmill, epitaxial BTO thin films were prepared on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition （PLD）, using SrRuOa（SRO）, LaSrCoOa（LSCO）, LaNiOa（LNO） oxide and Pt composite base electrodes. Analyses of X-ray diffraction （XRD） reveal that the BTO films＇ c-axis-oriented structure was effectively restrained, and its polarization increases from 0.45×10^-6C/cm^2 to 0.9×10^-6C/cm^2, coercive electric field decreases from 90×10^3 Wm to 50× 10^3 V/m.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2007年第4期50-52,共3页
Electronic Components And Materials
关键词
无机非金属材料
铁电材料
BTO薄膜
PLD
氧化物复合底电极
电滞回线
疲劳特性
non-metallic inorganic material
ferroelectric material
BTO thin film
PLD
oxide composite base electrode
hysteresis loop
fatigue behavior
