摘要
通过提高MIM电容的调整范围,实现了一个覆盖3.2~6.1GHz的CMOS LC VCO.该VCO使用0.18μm射频CMOS工艺制作,芯片面积约为1260μm×670μm.当输出5.5GHz时,VCO内核消耗功率为17.5mW;在100kHz频偏处的相位噪声是-101.67dBc/Hz.
The design and implementation of a CMOS LC VCO with 3. 2-6. 1GHz tuning range are presented. This is achieved by enhancing the tuning capability of the binary-weighted band-switching MIM capacitor. The circuit has been implemented in a 0. 18μm RF/Mixed-Signal CMOS process. The measured phase noise is - 101.67dBc/Hz at 1MHz offset from a 5.5GHz carrier,and the VCO core draws 9.69mA current from a 1.8V supply.
基金
国家自然科学基金资助项目~~