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高性能InGaAs/AlAs共振隧穿二极管的研制与器件模拟分析 被引量：1

Fabrication and Device Simulation of High Performance InGaAs/AlAs Resonant Tunneling Diodes on InP Substrates
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摘要 在半绝缘的InP衬底上采用分子束外延的方法生长制备了不同势垒厚度的RTD材料样品,室温下测量的最高峰-谷电流比为18.39.通过模拟得到RTD直流特性与势垒厚度、势阱材料及厚度、隔离层厚度以及掺杂浓度间的关系,对结果进行了分析与讨论. Resonant tunneling diodes （RTDs） with different barrier thicknesses were grown by molecular beam epitaxy （MBE） on semi-insulating InP substrates. The highest peak-to-valley current ratio is 18.39 at room temperature. The relationship between RTD direct current characteristics with barrier thickness,well and sub-well thickness,spacer thickness, and doping density are analyzed and discussed.
作者 马龙 张杨 戴扬 杨富华 曾一平 王良臣
机构地区 中国科学院半导体研究所
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第4期563-566,共4页 半导体学报（英文版）
基金 国家高技术研究发展计划资助项目(批准号:2003AA302750)~~
关键词 共振隧穿二极管 峰-谷电流比 电流-电压特性 器件模拟 resonant tunneling diodes peak-to-valley current ratio current-voltage characteristics device simulation
分类号 TN312.2 [电子电信—物理电子学]
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参考文献8

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同被引文献24

  • 1熊焰,傅正义,王皓.CaF_2助剂放电等离子烧结透明AlN陶瓷的微观结构和光学性能[J].中国有色金属学报,2005,15(11):1705-1709. 被引量：8
  • 2张材荣,陈宏善,陈玉红,冯旺军,李维学,许广济,寇生中.Al_8P_8团簇环状结构与性质的密度泛函理论研究[J].物理化学学报,2005,21(12):1368-1372. 被引量：3
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Journal of Semiconductors
2007年 第4期

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