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聚酞菁硅氧烷多晶型现象的HREM观察

HREM Observation of Polymorphism for Poly(phthalocyaninatosiloxane)
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摘要 把酞菁硅二醇单体置于440℃、1Pa的动态真空下,升华到新的NaCl单晶体的(100)解理面上,使之聚合并外延生成薄膜晶体,也用事先聚合好的聚酞菁硅氧烷作升华源制备了这类薄膜晶体。发现分子链垂直于薄膜平面。并用HREM观察了其多晶型现象。其中β-晶型为四方晶系,a=1.4nm,c=0.66nm,z=2;α-晶型属正交晶系,a=1.4nm,b=2.8nm,c=0.66nm,z=4;γ-晶型属正交晶系,a=1.4nm,b=5.6nm,c=0.66nm,z=8;θ-晶型为正交晶系,a=1.4nm,b=5.6nm,c=0.66nm,z=8。 phthalocyaninatosilicon dihydroxide was sublimed on a fresh cleavage plane of (100) ofNaCl single crystal at 440℃ and about 1 Pa dynamic vacuum. Their molecules were polymerizedand epitaxially grown into thin film crystals. Poly (phthalocyaninatosiloxane) was also used asa subliming source to prepare such kind of thin film crystals. It was found that the polymer cha-ins are perpendicular to the film surface. Its polymorphism was observed with high resolution ele-ctron microscopy (HREM). Its β-form belongs to tetragonal crystallographic system, a=1.4nmc=0.66nm,z=2; a-form orthorhombic system,a=1.4nm, b=2.8nm,c=0.66nm, z=4;r-form ort-horhombic, a=1.4nm, b=5.6nm, c=0.66nm, z=8 and θ-form orthorhombic. a=1.4nm,b=5.6nm,c=0.66nm,z=8.
出处 《分析测试通报》 CSCD 1990年第5期50-53,共4页
关键词 聚酞菁硅氧烷 导电聚合物 HREM Electron microscope micrography image polymer conductive polymer high resolution electron microscopy molecular image
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参考文献1

  • 1蔡丽英,毛智彪,李敏慧,周啸.聚酞菁硅氧烷的高分辨电子显微术研究[J]电子显微学报,1987(04).

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