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硝磷酸腐蚀的CdTe太阳电池性能 被引量:2

Performance of nitric-phosphoric acid etched CdTe solar cells
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摘要 CdTe薄膜的腐蚀是制作CdS/CdTe光伏电池的重要技术之一,本实验采用硝磷酸溶液(硝酸1%+磷酸70%+去离子水29%)腐蚀CdTe薄膜,通过XRD测试发现在CdTe膜上生成了碲层。随后,在腐蚀后的CdTe薄膜上分别沉积了几种结构的背接触层,并制备出相应结构的CdTe太阳能光伏电池。通过电池的光、暗I-V和C-V特性测试,以ZnTe/ZnTe:Cu/Ni为背接触的小面积太阳电池,其性能优于其它背接触的电池。实验结果表明器件性能与碲的生成和铜的扩散密切相关。 The chemical etching of CdTe thin films is one of important techniques in preparation of CdTe solar cells. In this paper, the CdTe thin films were etched with a mixture of nitric - phosphoric acid in water (NP) (HNO3 1%, H3PO4 70%, and de -ionized H20 29% ). And a Te layer was found on the etched CdTe films by the X - ray diffraction (XRD) measurement. Several types of back - contact layers were then deposited on the etched CdTe thin films to complete the fabrication of CdTe solar cells. From the dark and illuminated I - V and C - V measurements, higher efficiency has been demonstrated for the small area CdTe solar cells of ZnTe/ZnTe : Cu/Ni. And this kind of solar cells shows better performance than those with the other back contacts. The results also imply the close relationship between the device performance and the Te layer formation and Cu diffusion.
出处 《功能材料与器件学报》 EI CAS CSCD 北大核心 2007年第2期107-112,共6页 Journal of Functional Materials and Devices
基金 国家高技术研究与发展计划(No.2003AA513010) 四川省科技攻关项目(No.05GG021-003-3) 辐射物理及技术教育部重点实验室(四川大学)(No.K2005-10).
关键词 硝磷酸(NP) 背接触 太阳电池 nitric - phosphoric acid (NP) back contacts solar cells
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  • 1Jense G D,McCandless B E,Birkmire R W 1996 Mater.Res.Soc.Symp.Proc.426 325.
  • 2Ferekides C S,Britt J,Ma Y et al 1993 Proc.of the 23rd IEEE PVSC(Piscataway:IEEE)p389.
  • 3Vitrikhovskii N I,Mizetskaya I B 1959 Soviet Physics-Solid State 1 912.
  • 4Cruceanu E,Niculescu D 1965 Comptes Rendus de l'Academie des Sciences 261 935.
  • 5Ohata K,Saraie J,Tanaka T 1973 Jpn.J.Appl.Phys.12 1198.
  • 6Wood D A,Rogers K D,Lane D W et al 1998 J.Mater.Sci.171511.
  • 7Lane D W,Rogers K D,Painter J D et al 2000 Thin Solid Films 361-362 1.
  • 8Al-Ani S K J,Makadsi M N,A1-Shakarchi I K et al 1993 J.Mater.Sci.28 251.
  • 9Wood D A,Rogers K D,Lane D W et al 2000 J.Phys:Condens.Matter 12 4433.
  • 10Jacome C,Florez M,Gurevich Y G et al 2001 J.Phys.D:Appl.Phys.34 1862.

共引文献34

同被引文献22

  • 1李卫,冯良桓,武莉莉,蔡亚平,张静全,郑家贵,蔡伟,黎兵,雷智,张冬敏.CdS_xTe_(1-x)多晶薄膜的制备与性质研究[J].物理学报,2005,54(4):1879-1884. 被引量:15
  • 2宋慧瑾,郑家贵,冯良桓,蔡伟,蔡亚萍,张静全,李卫,黎兵,武莉莉,雷智,鄢强.CdTe太阳电池的不同背电极和背接触层的特性研究[J].物理学报,2007,56(3):1655-1661. 被引量:8
  • 3Wu X, Keane J C, Dhere R G, et al. 16.5% E0k'/ency CdS/ CdTe Polycrystalline Thin Film Solar Cells[ C]//17th European Photovo/ta/c So/or Energy Conference. Munich, Germany: IHT Press,2001.
  • 4Kraft D,311issen A,Broetz J,et al. Characteriza-n of Telluff-tm layers for Back Contact Formation on Close to Technology Treat- ed CdTe Surfaces [ J]. Journal of Applied Physics, 2003,94 (5) : 3589 - 3598.
  • 5Li Xiaonan,Niles D W,Hasoon F S,et al. Effect of Nitri-phos- phoric Acid Etches on Material Properties and Back-contact For- mation of CdTe-based Solar Cd/s[ J] .Journal of Vacuum Science and Technology(A), 1999,17 (3) : 805 - 809.
  • 6Batzner D L, Romeo A, Zogg H, et al. Development of E.i-'iem and Stable Back Contacts on CdTe/ CMS Solar Ce//s [J]. 311in Sol- id Films,2001,387( 1 - 2) : 151 - 154.
  • 7Danaher W J, Lyons L E, Marychurch M,et al. Chem/ca/Etch/ng of Crystal and Thin Film Cadmium Telluride [ J ]. Applied Sur- face Science. 1986,27(3) :338 - 354.
  • 8Li W, Feng L H,Zhm- J Q,et al. Studies of Key Technologies for CdTe Solar Modtdes[ J] .Science in China(Series E: Techno- logical Sciences), 2008,51 ( 1 ) : 33 - 39.
  • 9Danaher W J,Lyons L E,Marychurch M,et al.Chemicaletching of crystal and thin film cadmium telluride[].Ap-pl Surf Sci.1986
  • 10Levi D H,Woods L M,Albin D S,et al.Back contact effects on junction photoluminescence in CdTe/CdS solar cells[].Pro-ceedings of theth IEEE Photovoltaic Specialists Confer-ence.1997

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