摘要
根据经典的统计理论，并结合麦克斯韦速率分布律得出吸附过程中O2吸附量的理论模型，从而获得氧吸附面密度与温度、氧分压的理论变化规律。在活化能Ea=0．30eV的情况下，TiO2对氧气吸附的温度敏感区域在120～410K之间，最佳吸附温度为370K，这与由金红石相TiO2所制成氧敏元件的最佳灵敏度所处的工作温度（378K）相近。并由模拟理论推测O2在半导体表面的吸附面密度与氧分压呈线性增加。
The theoretical processes of the adsorbed O2 density with temperature and oxygen pressure are explained by a classical statistical theory and a theoretical model in the adsorption process according to Maxwell- Boltzmann distribution. The sensitized temperature for adsorbed oxygen on the TiO2 surface is in the region of 120 -410 K under an active energy Ea =0.30 eV, and the Optimal absorbed temperature is at 370 K. The results are close to the experimental nature, which the oxygen gas sensor is made by rutile TiO2 and optimal operatingtemperature is at 378 K. And also, it is induced by computer simulation that the absorbed O2 density on the surface of semiconductor TiO2 increases linearly with oxygen pressure.
出处
《传感器与微系统》
CSCD
北大核心
2007年第4期28-30,33,共4页
Transducer and Microsystem Technologies
基金
福建省纳米重大专项计划资助项目(2005HZ01-2-6)
关键词
气体传感器
氧吸附
能量粒子
活化能
gas sensor
oxygen absorption
energy particle
active energy
