半导体桥动态阻抗的试验研究

Study on Dynamic Resistance of Semicoductor Bridge

利用电容放电加载,通过测试半导体桥两端电压以及流过半导体桥的电流随时间的变化曲线,获得了半导体桥动态阻抗随输入能量变化的曲线。根据动态阻抗-能量曲线以及半导体桥作用过程,提出半导体桥动态阻抗与输入能量之间的关系应分四段表示,分别对应于阻抗正温升、阻抗负温升和熔化、汽化以及等离子体产生等几个阶段,并且分别可用线性公式和指数衰减公式表示。试验结果表明,在高加载速率、无能量损失情况下,所提出的四段式能够很好地拟合试验确定的半导体桥动态阻抗-输入能量曲线。

On capacitance discharge ,voltage drop-time and current-time curves are tested through two electrodes ,and the dynamic resistance-input energy relationship of semiconductor bridge is derived. Based on dynamic resistance-input energy curves and performance procees of semiconductor bridge,it is found that dynamic resistance-input energy relationship should be described as four-piecewise function, respectively related to such procedures as resistance increasing with temperature-resistance decreasing with temperature appended bridge melting, bridge gasifying and plasma producing. And these procedures can be mathematically expressed as linear or exponent attenuating formula. The tested results showed that on high charge velocity and no energy loss, the four piecewise function can fit dynamic resistance-input energy curves very well.