低干扰低损耗新型MOSFET三阶驱动电路

A Novel Three Stage Drive Circuit for MOSFET to Reduce Electromagnetic Interference Noise and Switching Losses

由于金属氧化物半导体场效应晶体管(MOSFET)存在开关速度快、驱动容易等特点,故在变流电路中大量使用,但由此而产生的电磁干扰也越来越严重。驱动电路作为功率单元与控制电路的接口,其性能对电磁干扰的影响十分重要。该文在对MOSFET开关暂态过程进行详细地分析后,提出一种新的驱动电路,该驱动电路在不影响开关速度的情况下可以减小电磁干扰及开关损耗,而且该驱动电路与传统驱动电路相比仅需增加几个额外的低压器件,易于实现。文中最后给出了三阶驱动电路与其它几种不同驱动电路开通与关断时的电压电流波形及相应的传导发射。实验结果表明该驱动电路电磁干扰小,功率损耗低,开关速度快,无电压及电流的过冲现象,实现了驱动电路的优化。

Metal oxide semiconductor field effect transistor （MOSFET） is widely applied in converter circuit because of its high switching speed and easy driving, which brings severe electromagnetic interference（EMI）. The gate drive circuit is the interface between the power switches and the logic-level signals. Its performance affects the level of EMI. This paper proposed a novel drive circuit after analyzing the switching transient of MOSFET. The drive circuit can reduce EMI noise and switching losses without the increase of switching time. Compared to the conventional gate drive circuit, the proposed drive circuit can be achieved by adding a few extra low voltage components. Turn on and turn off switching waveforms and conduct emission for the novel drive circuit and other drive circuit were given. The experimental results demonstrate that the novel drive circuit possesses low conducted emissions and switching losses, high switching speed, small peak values of transients, which attains the gate drive circuit＇s optimization.