非对称栅压在负栅极-源漏极交叠结构超薄沟道双栅器件中的应用

Asymmetric gate bias in UTB DG-MOSFET with negative gate-overlap

为了研究纳米尺度器件中量子力学效应对传输特性及动态特性的影响,在器件模拟软件TAURUS中实现了量子修正的漂移扩散模型(QDD),并对具有负栅极-源漏极交叠结构的超薄沟道双栅器件进行了数值模拟。结果显示:非对称栅压的控制方法使得器件具有动态可调的阈值电压,能够动态地适应高性能与低功耗的要求。通过优化栅极与源漏区的交叠长度可以降低栅极电容,从而提高器件的动态特性,提高电路的工作速度。

The quantum effect on the transfer and dynamic characteristics of nanoscale semiconductor devices was analyzed using a quantum drift-diffusion （QDD） model in the device simulator TAURUS. Simulations of UTB DG-MOSFETs with negative gate-overlap show that separate control of the back gate provides selectable control of the device threshold voltage for high speed or low power applications. A negative gate-overlap can optimize the dynamic gate capacitance characteristics and improve the circuit speed.