AlGaN/GaN HEMT材料外延技术研究

Research on the Materials Epitaxial Technology of AlGaN/GaN HEMT

采用低压MOCVD技术在蓝宝石和SiC衬底上生长了本征GaN和AlGaN/GaN HEMT结构材料。生长过程中采用了EpiTUNEⅡ在位监测技术,对材料生长工艺进行了模型分析以及优化控制。在获得具有良好表面形貌、晶体质量以及光荧光谱的GaN本征材料基础上,生长了AlGaN/GaN HEMT结构材料,获得了良好的2DEG性能。

By LP MOCVD, intrinsic GaN and AlGaN/GaN HEMT materials were grown on sapphire and SiC substrate. During growth process, in-situ monitor （EpiTUNE Ⅱ ） was used to analyze the growth model, and the growth control was optimized. Based on intrinsic GaN with fine surface morphology, good crystal quality and perfect photoluminescence spectrum, AlGaN/GaN HEMT structure material was grown, and got fine 2DEG properties.