期刊文献+

垂直腔半导体光放大器带宽特性研究 被引量:2

Study on optical bandwidth characteristic of vertical cavity semiconductor optical amplifiers
下载PDF
导出
摘要 为了研究垂直腔半导体光放大器(vertical cavity semiconductor optical amplifiers,VCSOA)中抽运光功率、分布布喇格反射镜(distributed Bragger reflector,DBR)周期数以及输入信号强度对其带宽特性的影响,采用传输矩阵法进行了数值模拟。计算模型中考虑了载流子和光强沿纵向的分布,以及腔内介质折射率的不均匀性对光波传输的影响。得到的结果与文献中的结论符合较好。结果表明,提高VCSOAs的抽运水平可以增大其峰值增益,同时会缩小其增益带宽;减小DBR周期数可以获得更大的增益带宽积。另外,输入光信号强度对VCSOA带宽的大小也有较大的影响。 Based on the transfer matrix method, the effects of the pump optical power, the distributed Bragger reflector (DBR) periods and the intensity of the input optical signal on the optical bandwidth characteristics of vertical cavity semiconductor optical amplifiers (VCSOAs) are simulated numerically. The computer model includes the longitudinal distribution of cartier and optical intensity and the influence of the ununiformity of the refractive index of the material inside the cavity on the propagation of the optical signal. The obtained results agree well with the conclusion of previous literatures. The results show that the enhancement of the pump level will increase the peak gain of VCSOAs and decrease the optical bandwidth simultaneously; reducing the DBR periods will induce larger optical gain bandwidth product. In addition, the intensity of input optical signal will obviously affect the range of the optical bandwidth of VCSOAs.
出处 《激光技术》 CAS CSCD 北大核心 2007年第2期137-140,共4页 Laser Technology
基金 高等学校博士学科点专项科研基金资助项目(20030613007)
关键词 激光器 垂直腔半导体光放大器 带宽 传输矩阵 增益 lasers vertical cavity semiconductor optical amplifiers bandwidth transfer matrix gain
  • 相关文献

参考文献11

  • 1KIMURA T, BJORLIN E S, CHOU H F et al. Optically preamplified receiver at 10,20 and 40Gbit/s using a 1550nm vertical-cavity SOA[ J ]. IEEE Photonics Technology Letters ,2005,17 ( 2 ) :456 - 458.
  • 2COLE G, BJORLIN E S, WANG C S et al. Widely tunable bottomemitting vertical-caviy SOAs [ J ]. IEEE Photonics Technology Letters,2005,17 (12) :2526 - 2528.
  • 3贾习坤,罗斌,潘炜,姚海峰,曹昌胜.传输矩阵法研究垂直腔半导体光放大器增益特性[J].激光技术,2005,29(4):377-379. 被引量:3
  • 4邓果,潘炜,罗斌,严云富,李孝峰,赵峥.VCSOA中光双稳环宽控制的理论分析[J].激光技术,2005,29(1):74-76. 被引量:5
  • 5PIPREK J, BJORLIN E S, BOWERS J E. Design and analysis of vertical-cavity semiconductor optical amplifiers [ J ]. IEEE J Q E,2001,37(1) :127 -134.
  • 6LIM S F,CHANG-HASNAIN C J. A proposal of broad-bandwidth vertical-cavity laser amplifier [ J ]. IEEE Photonics Technology Letters,1995,7( 11 ) :1240 - 1242.
  • 7王刚,罗斌,潘炜,熊杰.A Transfer Matrix-Based Analysis of Vertical-Cavity Semiconductor Optical Amplifiers[J].Chinese Physics Letters,2005,22(10):2561-2564. 被引量:6
  • 8CORZINE S W, GEELS R S,SCOTT J W et al. Design of Fabry-Perot surface-emitting lasers with a periodic gain structure [J]. IEEE J Q E, 1989,25 (6) : 1513 - 1523.
  • 9赵峥,潘炜,罗斌,邓果,王勇.垂直腔半导体光放大器的增益特性数值分析[J].激光与红外,2004,34(2):116-118. 被引量:2
  • 10TANG J F, ZHENG Q. Applied thin film optics [ M ]. Shanghai: Shanghai Scientific and Technical Publishers, 1984. 65 ( in Chinese ).

二级参考文献42

  • 1ROYO P, KODA R, COLDREN L A. Vertical cavity semiconductor optical amplifiers:comparison of Fabry-Perot and rate equation approaches [ J]. IEEE J Q E ,2002,38 (3) :279 ~ 284.
  • 2TOMBLING G, SAITOH T, MUKAI T. Performance predictions for vertical cavity semiconductor laser amplifiers [ J]. IEEE J Q E, 1994,30( 11 ) :2491 ~ 2498.
  • 3SANCHEZ M, WEN P, GROSS M et al. Nonlinear gain in vertical-cavity semiconductor optical amplifiers [ J]. IEEE Photon Technol Lett,2003,15(1) :1 ~3.
  • 4AGRAWAL G P, DUTTA N K. Semiconductor lasers [ M ]. 2nd ed,New York .van Nostrand Reinhold Press, 1993. 495 ~499.
  • 5PAKDEEVANICH P,ADAMS M J. Measurements and modeling of reflective bistability in 1. 55μm laser diode amplifiers [J]. IEEE J Q E,1999,35(12) :1894 ~ 1903.
  • 6WEN P, SANCHEZ M, GROSS M et al. Vertical-cavity optical AND gate [J]. Opt Commun,2003,219(2) :383 ~387.
  • 7ADAMS M J,WESTLAKE H J,O' MAHONY M J et al. A comparison of active and passive optical bistability in semiconductors [ J]. IEEE J Q E,1985,21 (9) :1498 ~ 1502.
  • 8WIEDNMANN D, MOELLER B, MICHALZIK R. Performance characteristics of vertical-cavity semiconductor laser amplifier [ J ]. Electron Lett,1996,32(4) :342 -343.
  • 9PIPRED J, BJORLIN E S, BOWERS J E. Optical gain-bandvddth product of vertical-cavity amplifiers [ J]. Electron Lett ,2001,37 ( 5 ) :298 - 299.
  • 10BJORLIN E S, BOWERS J E. Noise figure of vertical-cavity semiconductor optical amplifiers [ J ]. IEEE J Q E,2002,38 ( 1 ) :61 - 66.

共引文献12

同被引文献16

引证文献2

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部