两步法工艺制备GaN纳米晶

Preparation of GaN nano-crystal using two-step method

采用先在Si(111)衬底上磁控溅射制备Ga2O3,然后在氨气气氛中退火氨化的方法制备了一维GaN纳米晶结构.通过对不同温度下氨化生长的GAN纳米晶的扫描电子显微镜(SEM)观察,确定了氨化生长一维GaN纳米晶的最佳制备温度为950℃.用X射线衍射(XRD)分析了硅片上的纳米晶成分,并用高分辨电镜(HRTEM)观察了该实验条件下生长的一维GaN纳米晶的微观结构.

One-dimensional GaN nano-crystal was synthesized on Si（111） substrate through ammoniating Ga2O3 deposited by radio frequenay magnetron sputtering technology. The best annealing temperature is confirmed to be 950℃ by Scanning Electric Microscope（SEM） morphology observation. X- ray Diffraction（XRD） is used to study the components of the sample and High Resolution Transmission Electron Microscope（HRTEM） is used to study the microstructure of the nano GaN crystal.