未掺杂纳米线高电阻与其晶体微结构光电性质

On Photo-electric Properties of Nanwire Mosfet with Its Crystal Microstructure

讨论了纳米线的电阻测量及引起高电阻的原因,即宽带多型、纳米尺寸和未掺杂本征阻值大等.对纳米碳化硅线分别进行了直径为5 nm、10 nm、20 nm纳米线电阻测量,在电压为100 V以内测量其电阻达100 MΩ.此外,纳米线MOSFET晶体管室温出现I-V高电流特性.讨论了这一现象的产生可能性,提出了假设,认为纳米线晶体中的电子在某种机制的作用下,形成电子对,这时,库仑阻塞效应的机制由单电子变成成对的多电子才能解释这一现象.其公式为ΔE=(ne)2C.对纳米线进行拉曼光谱鉴定和投射电子显微镜鉴别,显示出纳米线为4H碳化硅多型的衍射和光谱特点.

The high resistance of nanowire silicon carbide in its MOSFET is discussed and computed with the measurement of Katheley43000. It is thought to be relative to the widening-band of nanowire silicon carbide,nanoscale and undopping. The single electron effect appeared in Ⅰ-Ⅴ test on nanowire MOSFET. The Ⅰ ds reached micro Ampere orders of magnitude and it should be attributed to the Cooper pairs because electron spin or magnons pass the nanowire island not as a single electron, charging energy shifts with （he）2 The discrimination of Raman spectra and TEM of nanowire silicon carnumber square, i.e.△=（ne）^2/C . The discrimination of Raman spectra and TEM of nanowire silicon carbide was shown to be 4H-SiC.