摘要
讨论了纳米线的电阻测量及引起高电阻的原因,即宽带多型、纳米尺寸和未掺杂本征阻值大等.对纳米碳化硅线分别进行了直径为5 nm、10 nm、20 nm纳米线电阻测量,在电压为100 V以内测量其电阻达100 MΩ.此外,纳米线MOSFET晶体管室温出现I-V高电流特性.讨论了这一现象的产生可能性,提出了假设,认为纳米线晶体中的电子在某种机制的作用下,形成电子对,这时,库仑阻塞效应的机制由单电子变成成对的多电子才能解释这一现象.其公式为ΔE=(ne)2C.对纳米线进行拉曼光谱鉴定和投射电子显微镜鉴别,显示出纳米线为4H碳化硅多型的衍射和光谱特点.
The high resistance of nanowire silicon carbide in its MOSFET is discussed and computed with the measurement of Katheley43000. It is thought to be relative to the widening-band of nanowire silicon carbide,nanoscale and undopping. The single electron effect appeared in Ⅰ-Ⅴ test on nanowire MOSFET. The Ⅰ ds reached micro Ampere orders of magnitude and it should be attributed to the Cooper pairs because electron spin or magnons pass the nanowire island not as a single electron, charging energy shifts with (he)2 The discrimination of Raman spectra and TEM of nanowire silicon carnumber square, i.e.△=(ne)^2/C . The discrimination of Raman spectra and TEM of nanowire silicon carbide was shown to be 4H-SiC.
出处
《湖北工业大学学报》
2006年第6期4-6,共3页
Journal of Hubei University of Technology
基金
教育部重点科技项目(206095)
湖北省教育厅重点项目(D200614002)
教育部出国留学回国人员基金
湖北省教育厅重大项目(2000Z0017)
湖北省教育厅对外科技交流项目(鄂外教2006[25])
关键词
纳米线
碳化硅
电阻
似单电子效应
COOPER对
室温
nanowire, huge resistance
single electron transistor
MOSFET cooper pair
room temperature