超平坦化Gd_3Ga_5O_(12)(111)基片用于石榴石结构材料薄膜的生长

Ultrasmooth Gd_3Ga_5O_(12)(111) substrates by high-temperature annealing

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摘要通过高温退火处理获得了具有在原子尺度范围内平坦化表面的Gd3Ga5O12(111)基片。在此基片上生长的Y3Fe5O12薄膜的表面光滑度有明显提高。与商品的Gd3Ga5O12(111)基片相比,超平坦化的Gd3Ga5O12(111)基片在生长石榴石结构材料薄膜方面具有明显的优越性。 Ultrasmooth Gd3 Ga5 O12 （ 111 ） substrates were obtained by annealing at specified high temperatures. Surface smoothness of the yttrium iron garnet （YIG） films grown on these substrates was greatly improved, suggesting that the uhrasmooth Gd3 Ga5 O12 （111 ） substrates are superior to the commercial ones in growth of garnet films.

作者徐振峰

机构地区辽东学院教育技术中心

出处《黑龙江大学自然科学学报》 CAS 北大核心 2007年第2期275-277,280,共4页 Journal of Natural Science of Heilongjiang University

关键词表面平坦化基片石榴石薄膜 surface smoothness substrate garnet film

分类号 O539 [理学—等离子体物理]

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黑龙江大学自然科学学报

2007年第2期

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超平坦化Gd_3Ga_5O_(12)(111)基片用于石榴石结构材料薄膜的生长

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