摘要
用射频溅射法制备了(Fe88zr7B5)0.97CU0.03软磁合金薄膜,研究了不同磁场退火方式对(Fe88Zr7B5)0.97 Cu0.03薄膜软磁性能和巨磁阻抗(GMI)效应的影响。结果表明,纵向和横向磁场退火方式都能有效地提高薄膜样品的巨磁阻抗效应,在13 MHz频率下纵向最大GMI比分别为18％和17％;纵向磁场退火能有效消除薄膜样品的磁各向异性,优化薄膜样品的软磁性能;横向磁场退火则能有效感应横向磁各向异性并提高巨磁阻抗效应的磁场响应灵敏度。
The （ Fe88Zr7B5 ）0.97Cu0.03 films are deposited by radio frequency sputtering on the substrate of single crystal Si. The GMI effects in samples treated with different field annealing have been studied. The results have shown that the GMI ratios can be improved observably after longitudinal and transverse field annealing, with the maximum longitudinal GMI ratios up to 18% and 17% at the frequency of 13 MHz respectively. They have also revealed that longitudinal field annealing method can effectively relieve transverse magnetic anisotropy and optimize soft magnetic properties, but transverse annealing method can effectively induce transverse magnetic anisotropy and improve field sensitivity to longitudinal GMI.
出处
《台州学院学报》
2006年第6期39-42,共4页
Journal of Taizhou University
基金
浙江省教育厅资助项目(20050050)。
关键词
巨磁阻抗效应
磁场退火
感生各向异性
giant magneto- impedance effect
field annealing
induced magnetic anisotropy
