NPB/Alq_3有机量子阱光电特性研究

Optical and Electrical Properties of NPB/Alq_3 Organic Quantum Well

利用热蒸发的方法制备了有机量子阱发光器件和Alq3单层发光器件,其中NPB(N,N′-Di-[(1-naphthalenyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine)作垒层,Alq3(Tris-(8-quinolinolato)aluminum)作阱层,量子阱结构类似于无机半导体的Ⅱ型量子阱结构。实验发现有机量子阱发光器件结构中存在垒层向阱层的F rster无辐射共振能量转移,具有良好的电流-电压特性,光谱的窄化及蓝移,并且光谱的蓝移程度随电压的增大而逐渐增强。

In the present paper, the organic quantum-well device similar to the type- Ⅱ quantum well of inorganic semiconductor material was prepared by heat evaporation. NPB （N, N′-di-[（ 1-naphthalenyl）-N, N′-diphenyl]-（ 1, 1′-biphenyl）-4,4′-diamine） and Alq3 （Tris-（8-quinolinolato）aluminum） act as the potential barrier layer and the potential well layer respectively. Besides, the single layer structure of Alq3 was prepared. In the experiments, the Foerster nonradiative resonant energy transfer from the barrier layer to the well layer was identified, and the quantum well luminescence device possesses a favorable current-voltage property. The narrowing of spectrum was observed, and the spectrum shifted to blue region continuously when the applied voltage increased.